Clarkson University - CAMP - Director S.V. Babu

CAMP Director S.V. Babu (right) with chemistry professor Yuzhuo Li and graduate student Graham Ehret '04

Research Faculty & Staff CAMP Newsletters Corporate Sponsors Corporate Members New York State Associates CAMP Affiliates Related Links Announcements Contact Us CAMP Home

Center for Advanced Materials Processing (CAMP)

S.V. Babu
Distinguished University Professor and Director, CAMP
305 CAMP
Clarkson University
PO Box 5665
Potsdam, NY 13699-5665

Phone: 315-268-2336
E-mail: babu@clarkson.edu

Educational Background
Ph.D. (Physics) SUNY at Stony Brook, USA, 1971
Graduate study in Chemical Engineering Johns Hopkins Univ., Baltimore, USA, 1963-66
M.Tech (Chem. Eng.) Indian Inst. of Tech., Kharagpur, INDIA, 1963
B.Tech (Chem. Eng.) Andhra University, INDIA, 1962

Research Interests

Chemical mechanical planarization (CMP) of Cu, Ta & SiO₂
Plasma etching and deposition
Laser-induced/enhanced materials processing
Adhesion enhancement
CMP for shallow-trench isolation
Writing of copper lines
Thin film (diamond-like carbon, BN, AlN, etc.) deposition
Laser annealing
Particle-Surface Interactions

Related Facilities

Strasbaugh & IPEC polishers
AFM/Nanoindentor
EMG101 Excimer Laser
RF plasma reactor (Plasma-Therm 730/740 dual chamber)

Consulting
Several companies in the areas of CMP and thin films

Patents
Polishing compositions comprising polymeric cores having inorganic surface particles and method of use: Dennis Smith and S.V. Babu; U.S. Patent 6,918,820 (July 2005)

Chemical-mechanical polishing slurry and method: Y-S. Her, R. Srinivasan, S.V. Babu and S. Ramarajan, U.S. patent 6,702,954 (March 2004)

Slurry for chemical mechanical polishing of silicon dioxide: R. Srinivasan, S.V. Babu, W.G. America, and Y-S. Her, U.S. Patent 6,627,107 (Sept., 2003)

Slurry for chemical mechanical polishing of silicon dioxide: R. Srinivasan, S.V. Babu, W.G. America, and Y-S. Her, U.S. Patent 6,544,892 (April, 2003)

Slurry for chemical mechanical polishing of silicon dioxide: R. Srinivasan, S.V. Babu, W.G. America, and Y-S. Her, U.S. Patent 6,468,910 (Oct. 2002)

Slurry for chemical mechanical polishing of silicon dioxide: R. Srinivasan, S.V. Babu, W.G. America, and Y-S. Her, U.S. Patent 6,491,843 (Dec. 2002)

Electrophotographic apparatus with improved blue sensitivity: S.A. Visser, D.S. Rimai, P.M. Borsenberger, S.V. Babu, U.S. Patent 6,007,954 (Dec. 99)

Method of making multilayer electrophotographic photoconductive elements: S.A. Visser, D.S. Rimai, P.M. Borsenberger, S.V. Babu, 5,849,443 (Dec. 1998).

Multilayer photoconductive elements having low dark decay: S.A. Visser, D.S. Rimai, P.M.Borsenberger, S.V. Babu, U.S. Patent 5,849,445 (Dec. 1998).

Method of making corrosion resistant electrical components: C.V. Srividya and S.V. Babu, U.S. Patent, 5,840,427 (Nov. 1998).

Fuser members with an outermost layer of a fluorinated diamondlike carbon film, S.A. Visser, S.V. Babu, and C.V. Srividya, U.S. Patent 5,674,621 (Oct.1997).

Plasma conditioning of a surface towards electroless plating: G.W. Jones, N.H. Lu and S.V. Babu, U.S. Patent 5,061,359 (Oct. 1991).

Method of plasma etching a substrate with a gaseous organohalide compound: S.V. Babu, J.G. Hoffarth, K. Mack, W. Mlynko, J.F. Rembetski and A. Knoll, U.S. Patent 5,053,104 (Oct. 1991).

Interlaminate adhesion between polymeric materials and electrolytic Cu surfaces: S.V. Babu, V.Q. Bui, J.G. Hoffarth and J.A. Welsh, U.S. Patent 4,810,326.

Removal of residual catalyst from a dielectric substrate: P. Agostino, S.V. Babu, and J. Hoffarth, U.S. Patent 4,735,820 (April 1988).

Method of removing seed particles from circuit board substrate surface: S.V. Babu, W.F. Hermann, J.G. Hoffarth, V. Markovich, R.T. Wiley, U.S. Patent 4,718,972 (1988).

Uniform plasma reactor for drill smear removal: S.V. Babu, R.S. Horwath, Neng-Hsing Lu and J.A. Welsh, U.S. Patent 4,618,477 (Oct. 1986).

Plasma etching with tracer: S.V. Babu, J.G. Hoffarth and J. Welsh, U.S. Patent 4,599,134 (July 1986).

Recent Publications

2005
Chemical effects in chemical-mechanical planarization of TaN: Investigation of surface reactions in a peroxide-based alkaline slurry using Fourier transform impedance spectroscopy: V.R.K. Gorantla, S. B. Emery, S. Pandija, S.V. Babu, D. Roy, Materials Letters, 59, 690-693 (2005)

Oxalic acid as a complexing agent in copper planarization slurries: V.R.K.Gorantla, A. Babel. S, Pandija and S. V. Babu, Electrochem. And Solid State Lett. 8, G131-G134, (2005)

Citric acid as a complexing agent in chemical-mechanical planarization of copper: Investigation of surface reactions using impedance spectroscopy: V. R. K. Gorantla, K. A. Assiongbon, S. V. Babu, and D. Roy, J. Electrochem. Soc., 152, G404- 410, (2005)

Ammonium dodecyl sulfate as a dissolution inhibitor surfactant for electrochemical mechanical planarization of copper: Y. Hong, D. Roy and S.V. Babu, Electrochemistry and Solid-State Letters 8,G297-G300 (2005)

Amino acids as complexing agents during chemical mechanical planarization of Cu: V.R.K. Gorantla, E. Matijevi, and S.V. Babu, Chemistry of Materials 17, 2076-80, (2005)

Voltage initiated material removal for electrochemical mechanical planarization of copper in NO₃^- , glycine and H₂ O₂ containing electrolytes: P.C. Goonetillake, S.V. Babu and D. Roy, Electrochem. And Solid State Lett. 8, G190-193, (2005)

Particle adhesion studies relevant to chemical mechanical polishing: Zhenyu Lu, Niels P. Ryde, S.V. Babu, and E. Matijevi, Langmuir ( in press)

Electrochemical impedance characteristics of Ta/Cu contact regions in polishing slurries used for planarization of Cu and Ta: K.A. Assiongbon, S.B. Emery, V.R.K.Gorantla, S.V. Babu and D. Roy, Corrosion Science (in press)

Chemical-mechanical polishing of Copper using Molybdenum dioxide slurry: S. Hegde, U. Patri and S.V. Babu, J. Mater. Res. (in press)

The role of amine and carboxyl functional groups of complexing agents in slurries for chemical mechanical polishing of copper: V.R. Gorantla, D. Goia, E. Matijevi, and S.V. Babu, J. Electrochem. Soc. (accepted)

Interaction between abrasive particles and films during chemical-mechanical polishing of copper and tantalum: Ying Li, J. Zhao, P. Wu, Y. Lin, S.V. Babu and Y. Li, Thin solid Films (Accepted)

Utility of dodecyl sulfate surfactants as dissolution inhibitors in chemical mechanical planarization of copper: Y. Hong, U.B. Patri, S. Ramakrishnan, D. Roy and S.V. Babu: J. Materials Res. (accepted)

Role of the functional groups of complexing agents in copper slurries: Udaya Patri, Serdar Aksu and S.V. Babu: J. Electrochem. Soc (submitted)

2004
Relative Roles of H₂O₂ and Glycine in Chemical Mechanical Polishing of Copper Studied with Impedance Spectroscopy: J. Lu, J.E. Garland, C.M. Pettit, S.V. Babu, D. Roy, J. Electrochem. Soc., 151, G717-G722, (2004).

Chemical role of peroxide-based alkaline slurries in chemical-mechanical polishing of Ta: Investigation of surface reactions using time resolved impedance spectroscopy: K.A. Assiongbon, S.B. Emery, C.M. Pettit. S.V. Babu and D. Roy, Materials Chem. And Phys., 86, 347-357, (2004) .

Effect of pH on chemical-mechanical polishing of Cu and Ta: A. Jindal and S.V. Babu: J. Electrochem. Soc., 151, G709, (2004)

Slurry additive effects on the suppression of silicon nitride removal during chemical-mechanical polishing: W.G. America and S.V. Babu, Electrochem. and Solid State Lett., 7, G327, (2004)

Study of surface charge effects on oxide and nitride planrization using alumina/silica mixed abrasive slurries: S. Hegde and S.V. Babu, Electrochem. and Solid State Lett., 7, G317, (2004)

2003
Effect of pH and H₂O₂ on Ta CMP: Electrochemistry and XPS Studies: S. C. Kuiry, S. Seal, W. Fei, J. Ramsdell, V. Desai, S.V. Babu and Y. Li, J. Electrochem. Soc., 150, C36, (2003)

The effects of process variables on properties and composition of a-Si:C:H films: I. Moskowitz, W. Lanford, and S.V. Babu, J. Materials Res. 18, 129, (2003)

Chemical Mechanical Polishing of Dielectric Films Using Mixed Abrasive Slurries: A. Jindal, S. Hegde, and S.V. Babu, J. Electrochem. Soc., 150, G314, (2003)

The use of monodispersed colloids in the polishing of Copper and Tantalum: Z. Lu, S-H Lee, S.V. Babu, and E. Matijevi, J. Colloid and Interface Sci. 261, 55, (2003)

Study of Pattern Density Effects in CMP Using Fixed Abrasive Pads: V. Gorantla, R. Venigalla, L. Economicos, D. Connor, and S.V. Babu, J. Electrochem. Soc. 150, G821, (2003)

Mechanism and an empirical model of fixed abrasive polishing process on a web-format tool: R. Venigalla, L. Economicos, and S.V. Babu, J. Mater. Res. 18, 1659, (2003)

Removal of shallow and deep scratches and pits from copper wafers: S. Hegde and S.V. Babu, Electrochem. and Solid State Letters, 6, G126, (2003)

Effect of mixed abrasives in chemical mechanical polishing of oxide films: Z. Lu, S-H Lee, V.R. Gorantla, S.V. Babu, and E. Matijevi, J. Mater. Res. 18, 2323, (2003)

2002
Chemical-mechanical polishing using mixed abrasive slurries: A. Jindal, S. Hegde, and S.V. Babu, Electrochem. and Solid State Letters, 5, G48, (2002).

Chemical mechanical polishing of thermal oxide films using silica particles coated with ceria: S-H Lee, Z. Lu, S.V. Babu, and E.Matijevic, J. Materials Res. 17, 2744, (2002)

Mixed abrasive slurry: a study of metal CMP: A. Jindal, S. Hegde and S.V. Babu; Semiconductor Fab Tech, 16, (2002)

2001
Chemical-mechanical polishing of copper and tantalum films in potassium iodate-based slurries: Ying Li and S.V. Babu, Electrochem. and Solid State Letters, 4, G20, (2001)

Surface morphology and quality of a-Si:C:H: films: I. Moskovitz and S.V. Babu, Thin Solid Films, 385, 48, (2001)

Chemical-mechanical polishing of Cu and Ta films using silica abrasives: Y. Li, M. Hariharaputhiran, and S.V. Babu, J. Mater. Res., 16, 1066, (2001)

Chemical mechanical planarization of Cu and Ta: Some recent developments: Y. Li, and S.V. Babu, Semiconductor Fab Tech, 259, 13, (2001).

Chemical mechanical planarization of Cu and Ta: Role of different slurry constituents: S.V. Babu, Y. Li, and A. Jindal, JOM, June 2001

2000
Dishing effects during chemical-mechanical polishing of copper in acidic slurries, Q. Luo and S.V. Babu, J. Electrochem. Soc. 147, 4639-4644, (2000).

Hydroxyl radical formation in H₂O₂-amino acid mixtures and chemical mechanical polishing of copper, M. Hariharaputhiran, J. Zhang, S. Ramarajan, J. J. Keleher, Y. Li, and S. V. Babu, J. Electrochem. Soc. 147, 3820-3826, (2000).

Effect of pH and Ionic Strength on The Chemical-Mechanical Polishing of Tantalum, Ramarajan, S., Li, Y., Hariharaputhiran, M., Her, Y.-S., and Babu, S.V., Electrochemical and Solid-State Letters 3, 232-234, (2000).

Chemical-Mechanical Polishing of Ta, Hariharaputhiran, M., Li, Y., Ramarajan, S., and Babu, S.V., Electrochemical and Solid-State Letters 3, 95-98, (2000).

1999
Hardness of Sub- Micrometer Abrasive Particles and Polish Rate Measurements, Ramarajan, S., Hariharaputhiran, M., Her, Y.-S., and Babu, S.V., Surf. Engg. 15, 324-328, (1999).

Structural and electrochemical characterisation of metal doped diamondlike carbon films, Koduri P, Sunkara M.K., Dickey E.C., et al., Surf. Engg. 15, 373-376, (1999).

Transport phenomena in chemical mechanical polishing, Subramanian R.S., Zhang L, Babu S.V., J Electrochem Soc. 146, 4263-4272, (1999).

Anodic dissolution of diamondlike carbon film-coated type 301 stainless steel, C. Srividya, I. Moskowitz and S.V. Babu, J. Materials Res. 14, 2124-2132, (1999).

1998
Modification of the Preston Equation for the Chemical-Mechanical Polishing of Copper, Luo, Q., Ramarajan, S, and Babu S. V., Thin Solid Films 335, 160-167, (1998).

Development of a CD-ROM on thin film technologies: Design, Usability assessment and Challenges, S.V. Babu, I.I. Suni, D. Rasmussen, J. Engg. Education 583, 1998 Supplement.

Surface and corrosion characteristics of a-C:H/fluorocarbon films, C. Srividya, S.V. Babu and S.A. Visser, J. Adhesion 67, 81-85, (1998).

1997
Copper dissolution in aqueous ammonia-containing media during chemical-mechanical polishing, Q. Luo, R. Mackay, and S.V. Babu, Chemistry of Materials 9, 2101-2106, (1997).

Chemical-mechanical polishing of copper in alkaline media, Q. Luo, D.R. Campbell and S.V. Babu, Thin Solid Films 311, 177-182, (1997).

Corrosion protection ability of plasma-deposited a-C:H and fluorocarbon films, C. Srividya, M. Sunkara, and S.V. Babu, J. Materials Engg. And Performance 6, 586-590, (1997).

Resistance of plasma-deposited a-C:H/fluorocarbon films to anodic breakdown in aqueous electrolytes, C. Srividya, M. Sunkara and S.V. Babu, J. Materials Res. 12, 2099-2103, (1997).

Composition and surface energies of plasma-deposited multilayer fluorocarbon thin films, S.A. Visser, C.V. Srividya, and S.V. Babu, Surface Coatings and Technology 96, 210-222, (1997).

Surface and bulk composition-al characterization of plasma-polymerized fluorocarbon films prepared from hexafluoroethane and acetylene or butadiene reactant gases, S.A. Visser, C.E. Hewitt, J. Fornalik, C. Braustein, C.V. Srividya, and S.V. Babu, J. Appl. Poly. Sci. 66, 409-421, (1997).

A review of some properties and applications of diamondlike carbon films, C.V. Srividya and S.V. Babu, J. Energy, Heat and Mass Transfer 19, 39 (1997).

1996
Investigation of pad deformation and conditioning during the chemical-mechanical polishing of silicon dioxide films, K. Achuthan, J. Curry, M. Lacy, D. Campbell, and S.V. Babu, J. Electronic Materials 25, 1628-1632, (1996).

Corrosion resistance of diamondlike carbon film-coated aluminum films, C.V. Srividya and S.V. Babu, Chemistry of Materials 8, 2528-2533, (1996).

Stabilization of alumina slurry for chemical-mechanical polishing of copper, Q. Luo, D.R. Campbell and S.V. Babu, Langmuir 12, 3563-3566, (1996).

Synthesis of silicon nitride particles in pulsed rf plasmas, R.J. Buss and S.V. Babu, J. Vac. Sci. and Tech. B14, 577, (1996).

Books Edited
Chemical-Mechanical Planarization: 2002 MRS meeting Proceedings, Vol. 732E (electronic- only publication), S.V. Babu, R.Singh, N. Hayasaka, and M. Oliver (eds.)

Chemical-mechanical Polishing 2001, Advances and Future Challenges: 2001 MRS Meeting Proceedings, Vol 671, S.V. Babu, K.C. Cadien and H. Yano (eds)

Chemical-Mechanical Polishing: Fundamentals and Challenges: MRS Spring Meeting proceedings, Vol. 566, S.V. Babu, S. Danyluk, M. Krishnan, and M. Tsujimura (eds) (1999).